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期刊文章:?

[1]?Longxiang Yin, Gang Du and Xiaoyan Liu, “Impact of Ambient Temperature on the Self-heating Effects in FinFETs,” Journal of Semiconductors, vol. 39, no. 9, pp. 094011, 2018.?

[2]?Longxiang Yin, Lei Shen, Shaoyan Di, Gang Du and Xiaoyan Liu, “Investigation of thermal effects on FinFETs in the quasi-ballistic regime,” Japanese Journal of Applied Physics, vol. 04FD14, no. 57, pp. 4F-14F, 2018.?

[3]?Yin Longxiang, Shen Lei, Jiang Hai, Du Gang and Liu Xiaoyan. “Impact of self-heating effects on nanoscale Ge p-channel FinFETs with Si substrate,” Sci. China Inf. Sci., Volume 61, Issue 6, pp. 062401:1-062401:9, 2018?

[4]?Ran Cheng, Longxiang Yin, Heng Wu, Xiao Yu, Yanyan Zhang, Zejie Zheng, Wangran Wu, Bing Chen, Peide D. Ye, Xiaoy?an Liu and Yi Zhao. ”Experimental Investigation of Ballistic Carrier Transport for Sub-100nm Ge n-MOSFETs,” IEEE Electron Device Lett., Volume 38, Issue 4, pp. 434- 437, 2017.?

會(huì)議文章：?

[1]?Xiaoming Chen, Longxiang Yin, Bosheng Liu and Yinhe Han, “Merging Everything (ME): A Unified FPGA Architecture Based on Logic-in-Memory Techniques,” in Proc. Of 2019 ACM/IEEE Design Automation Conference (DAC),2019, pp. 1-2. (CCF-A類)?

[2]?Longxiang Yin, Minquan Fang, Lang Zeng, Lilun Zhang, Gang Du and Xiaoyan Liu. “Accelerated 3D full-band self-consistent ensemble Monte Carlo device simulation utilizing intel MIC co-processors on tianhe II,” In Proc. of 2015 International Workshop on Computational Electronics (IWCE), 2015, pp. 1-4.?

[3]?Longxiang Yin, Hai Jiang, Lei Shen, Juncheng Wang, Gang Du and Xiaoyan Liu, “Investigation of local heating effect for 14nm Ge pFinFETs based on Monte Carlo method,” in Proc. of 2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2016, pp. 1-2.?

[4]?Hai Jiang, Longxiang Yin, Yun Li, Nuo Xu, Kai Zhao, Yandong He, Gang Du, Xiaoyan Liu and Xing Zhang, “Comprehensive understanding of hot carrier degradation in multiple-fin SOI FinFETs,” in Proc. of 2015 IEEE International Reliability Physics Symposium (IRPS), 2015, pp. 1-6. ?

[5]?Yun Li, Shaoyan Di, Hai Jiang, Peng Huang, Yijiao Wang, Zhiyuan Lun, Lei Shen, Longxiang Yin, Xing Zhang, Gang Du and Xiaoyan Liu, “Insight into PBTI in InGaAs nanowire FETs with Al2O3 and LaAlO3 gate dielectrics,” in Proc. of 2016 IEEE International Electron Device Meeting (IEDM), 2016, pp. 36.5.1-36.5.4.

2020年度計(jì)算所優(yōu)秀研究人員